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Sprague-Goodman Diods
| Model |
Firm |
Cmin, pF |
Cmax, pF |
Description |
Web URL |
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GVD1202-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(30V)= 3.4, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1202-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 1.2 pF, C(0V)/С(30V)= 3.4, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1203-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(30V)= 3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1203-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 1.5 pF, C(0V)/С(30V)= 3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1204-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(30V)= 3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1204-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 1.8 pF, C(0V)/С(30V)= 3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1205-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(30V)= 3.7, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1205-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 2.2 pF, C(0V)/С(30V)= 3.7, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1207-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(30V)= 3.8, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1207-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 3.3 pF, C(0V)/С(30V)= 3.8, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1208-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(30V)= 3.9, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1208-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 3.9 pF, C(0V)/С(30V)= 3.9, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1209-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(30V)= 3.9, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1209-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 4.7 pF, C(0V)/С(30V)= 3.9, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1210-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(30V)= 4.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1210-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, common cathode, C(4V)= 5.6 pF, C(0V)/С(30V)= 4.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1211-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 6.8 pF, C(0V)/С(30V)= 4.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1212-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 8.2 pF, C(0V)/С(30V)= 4.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1213-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 10.0 pF, C(0V)/С(30V)= 4.1, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1214-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 12.0 pF, C(0V)/С(30V)= 4.1, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1215-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 15.0 pF, C(0V)/С(30V)= 4.2, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1250/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1216-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 18.0 pF, C(0V)/С(30V)= 4.2, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1217-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, high Q abrupt, epitaxial silicon construction, single cathode, C(4V)= 22.0 pF, C(0V)/С(30V)= 4.2, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1401-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(2V)= 46.0-68.0 pF, C(7V)= 6.1 pF, C(10V)= 4.2-5.2 pF, reverse breakdown voltage= 12 V, Q(min - 2 V)= 75/10 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD1404-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(2V)= 100.0-150.0 pF, C(7V)= 13.0 pF, C(10V)= 8.6-10.6 pF, reverse breakdown voltage= 12 V, Q(min - 2 V)= 75/10 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20433-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 3.0-3.6 pF, C(1V)/С(3V)= 1.4-1.9, C(1V)/С(6V)= 2.6-3.3, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20433-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 3.0-3.6 pF, C(1V)/С(3V)= 1.4-1.9, C(1V)/С(6V)= 2.6-3.3, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20434-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 5.85-7.15 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 2.8-3.4, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20434-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 5.85-7.15 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 2.8-3.4, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20435-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 10.35-12.65 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 2.9-3.4, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20435-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 10.35-12.65 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 2.9-3.4, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20436-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 15.50-18.50 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 3.0-3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20436-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 15.50-18.50 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 3.0-3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz,device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20437-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 45.00-54.00 pF, C(1V)/С(3V)= 1.6-2.0, C(1V)/С(6V)= 3.0-3.5, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20442-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20442-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 350/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20443-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 350/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20443-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20444-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20444-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20445-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20445-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20445-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20446-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20447-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 225/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20449-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 150/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20450-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD20450-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, common cathode, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30422-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, C(0V)= 2.7 pF, C(4.0V)= 1.25 - 1.75 pF, C(20V)= 0.43-0.57 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30422-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 9.5 - 14.5 pF, C(25V)= 1.8-2.8 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30422-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, common cathode, C(0V)= 2.7 pF, C(4.0V)= 1.25 - 1.75 pF, C(20V)= 0.43-0.57 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30432-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, C(0V)= 4.2 pF, C(4.0V)= 1.70 - 2.50 pF, C(20V)= 0.52-0.72 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30432-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 9.5 - 14.5 pF, C(25V)= 1.8-2.8 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30432-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, common cathode, C(0V)= 4.2 pF, C(4.0V)= 1.70 - 2.50 pF, C(20V)= 0.52-0.72 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30442-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, C(0V)= 6.3 pF, C(4.0V)= 2.20 - 3.80 pF, C(20V)= 0.68-0.96 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30442-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 26.0 - 32.0 pF, C(25V)= 4.3-6.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30442-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, common cathode, C(0V)= 6.3 pF, C(4.0V)= 2.20 - 3.80 pF, C(20V)= 0.68-0.96 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30452-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, C(0V)= 4.2 pF, C(4.0V)= 1.70 - 2.50 pF, C(20V)= 0.52-0.72 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30452-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, common cathode, C(0V)= 4.2 pF, C(4.0V)= 1.70 - 2.50 pF, C(20V)= 0.52-0.72 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30462-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, C(0V)= 2.7 pF, C(4.0V)= 1.25 - 1.75 pF, C(20V)= 0.43-0.57 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30462-004 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, microwave hyperabrupt series, epitaxial silicon construction, common cathode, C(0V)= 2.7 pF, C(4.0V)= 1.25 - 1.75 pF, C(20V)= 0.43-0.57 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30501-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 26.0 - 32.0 pF, C(25V)= 4.3-6.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30501-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 26.0 - 32.0 pF, C(25V)= 4.3-6.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30502-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 9.5 - 14.5 pF, C(25V)= 1.8-2.8 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30503-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 26.0 - 32.0 pF, C(25V)= 4.3-6.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30504-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(3.0V)= 26.0 - 32.0 pF, C(25V)= 4.3-6.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30601- 001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(4.0V)= 18.00 - 22.0 pF, C(8V)= 45.0-55.0 pF, C(20V)= 2.7-3.5 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 160/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30602-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(4.0V)= 45.00 - 55.0 pF, C(8V)= 18.0-25.0 pF, C(20V)= 6.6-9.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 125/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD30603-001 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, VHF/UHF hyperabrupt series, epitaxial silicon construction, C(4.0V)= 100.00 - 120.0 pF, C(8V)= 39.0-55.0 pF, C(20V)= 14.0-19.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 80/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD60100 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount monolithic package, epitaxial silicon construction, single cathode, C(1V)= 2.6 - 3.8 pF, C(1V)/С(3V)= 1.4 - 2.2, C(1V)/С(6V)= 2.6 - 3.6, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD60200 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount monolithic package, epitaxial silicon construction, single cathode, C(0V)= 3.25 pF, C(4V)= 0.9 - 1.5 pF, C(20V)= 0.2 - 0.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 015 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 112 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90001-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 36.0 pF, C(2.5V)= 18.0 - 27.0 pF, C(4V)= 12.0 pF, C(8V)= 6.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 011 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 015 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 111 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 113 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 114 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90002-- 115 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 26.0 pF, C(2.5V)= 13.0 - 20.0 pF, C(4V)= 9.0 pF, C(8V)= 4.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 011 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 012 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 013 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 014 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 015 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 111 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 112 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 113 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 114 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90003-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 17.0 pF, C(2.5V)= 8.5 - 13.0 pF, C(4V)= 6.0 pF, C(8V)= 3.2 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 011 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 012 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 013 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 014 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 015 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 111 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 112 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 113 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 114 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90004-- 115 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 13.0 pF, C(2.5V)= 6.5 - 10.0 pF, C(4V)= 4.5 pF, C(8V)= 2.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 750/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 011 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 012 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 013 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 014 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 015 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90005-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 9.0 pF, C(2.5V)= 4.5 - 6.5 pF, C(4V)= 3.0 pF, C(8V)= 1.7 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90006-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 4.0 pF, C(2.5V)= 2.0 - 3.0 pF, C(4V)= 1.5 pF, C(8V)= 1.0 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90007-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.8 pF, C(2.5V)= 1.1 - 1.5 pF, C(4V)= 0.8 pF, C(8V)= 0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90008-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 1.2 pF, C(2.5V)= 0.8 - 1.1 pF, C(4V)= 0.6 pF, C(8V)= 0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD90009-- 115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, epitaxial silicon, silicon dioxide passivated, surface mount low parasitic package, C(1V)= 0.6 pF, C(2.5V)= 0.5 - 0.8 pF, C(4V)= 0.4 pF, C(8V)= 0.35 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91300-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 0.8 pF, C(0V)/С(4V)= 1.5, C(4V)/С(30V)= 1.45, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3900/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91301-115 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.0 pF, C(0V)/С(4V)= 1.6, C(4V)/С(30V)= 1.55, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3800/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-014 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-015 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-112 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-113 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91302-115 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.2 pF, C(0V)/С(4V)= 1.7, C(4V)/С(30V)= 1.60, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-013 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-111 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-113 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-114 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91303-115 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.5 pF, C(0V)/С(4V)= 1.8, C(4V)/С(30V)= 1.65, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-012 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-013 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-014 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-015 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-112 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-113 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-114 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91304-115 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 1.8 pF, C(0V)/С(4V)= 1.9, C(4V)/С(30V)= 1.70, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-012 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-015 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-111 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-112 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-113 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-114 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91305-115 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.2 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.75, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-011 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-012 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-013 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-014 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-015 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-111 |
Sprague-Goodman Electronics, Inc. |
|
|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91306-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 2.7 pF, C(0V)/С(4V)= 2.0, C(4V)/С(30V)= 1.80, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3300/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-113 |
Sprague-Goodman Electronics, Inc. |
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|
Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91307-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.3 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.85, reverse breakdown voltage= 12 V, Q(min - 4 V)= 3100/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91308-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 3.9 pF, C(0V)/С(4V)= 2.1, C(4V)/С(30V)= 1.90, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91309-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 4.7 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 1.95, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD91310-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, single cathode, C(4V)= 5.6 pF, C(0V)/С(4V)= 2.2, C(4V)/С(30V)= 2.0, reverse breakdown voltage= 12 V, Q(min - 4 V)= 2500/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-015 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-111 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-112 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-113 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-114 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92101-115 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 26.0 pF, C(4V)= 8.75-10.80 pF, C(20V)= 1.85-2.50 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 400/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-012 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-013 |
Sprague-Goodman Electronics, Inc. |
|
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92102-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 14.0 pF, C(4V)= 4.45-5.50 pF, C(20V)= 0.85-1.30 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 600/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92103-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 7.0 pF, C(4V)= 2.65-3.30 pF, C(20V)= 0.65-0.90 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 700/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92104-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 5.0 pF, C(4V)= 1.75-2.20 pF, C(20V)= 0.50-0.70 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 850/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92105-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 3.0 pF, C(4V)= 1.30-1.65 pF, C(20V)= 0.40-0.55 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1000/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-011 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-012 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-013 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-014 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-015 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-111 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-112 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-113 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-114 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
GVD92106-115 |
Sprague-Goodman Electronics, Inc. |
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Varactord diod, tuning, silicon dioxide, surface mount low parasitic package, epitaxial silicon construction, C(0V)= 2.0 pF, C(4V)= 0.85-1.10 pF, C(20V)= 0.30-0.45 pF, reverse breakdown voltage= 12 V, Q(min - 4 V)= 1200/50 MHz, device dissipation at 25°C: 250 mW, Topr = -55°C to +125°C |
Web URL |
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